Large-time asymptotics for a matrix spin drift-diffusion model

DOI10.1016/J.JMAA.2020.123887MaRDI QIDQ2304883zbMATH OpenOpenAlexWikidataFDO

Authors Philipp Holzinger, Ansgar Jüngel

Publication date 9 March 2020

Published in Journal of Mathematical Analysis and Applications (Search for Journal in Brave)

Full work available at URL https://arxiv.org/abs/1908.10096

zbMATH Keywords

exponential decayfree energydensity matrixdrift-diffusion equationslarge-time asymptoticsspin-polarized transport in semiconductors

Mathematics Subject Classification ID

Asymptotic behavior of solutions to PDEs (35B40) Boltzmann equations (35Q20) Motion of charged particles (78A35) Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of semiconductors (82D37) PDEs in connection with semiconductor devices (35Q81)

Abstract: The large-time asymptotics of the density matrix solving a drift-diffusion-Poisson model for the spin-polarized electron transport in semiconductors is proved. The equations are analyzed in a bounded domain with initial and Dirichlet boundary conditions. If the relaxation time is sufficiently small and the boundary data is close to the equilibrium state, the density matrix converges exponentially fast to the spinless near-equilibrium steady state. The proof is based on a reformulation of the matrix-valued cross-diffusion equations using spin-up and spin-down densities as well as the perpendicular component of the spin-vector density, which removes the cross-diffusion terms. Key elements of the proof are time-uniform positive lower and upper bounds for the spin-up and spin-down densities, derived from the De Giorgi-Moser iteration method, and estimates of the relative free energy for the spin-up and spin-down densities.

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Cited in

(5)

• Analysis of a drift-diffusion model with velocity saturation for spin-polarized transport in semiconductors
• Diffusion limit of a generalized matrix Boltzmann equation for spin-polarized transport
• Bounded weak solutions to a matrix drift-diffusion model for spin-coherent electron transport in semiconductors
• Three-species drift-diffusion models for memristors
• Quantum drift-diffusion equations for a two-dimensional electron gas with spin-orbit interaction

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