A finite-volume scheme for a spinorial matrix drift-diffusion model for semiconductors

DOI10.1002/NUM.22030MaRDI QIDQ2808864zbMATH OpenOpenAlexFDO

Authors C. Chainais-Hillairet, Ansgar Jüngel, Polina Shpartko

Publication date 25 May 2016

Published in Numerical Methods for Partial Differential Equations (Search for Journal in Brave)

Full work available at URL https://arxiv.org/abs/1502.05639

zbMATH Keywords

energy dissipationfinite volumessemiconductorsfield-effect transistorspinor drift-diffusion equations

Mathematics Subject Classification ID

Finite volume methods for initial value and initial-boundary value problems involving PDEs (65M08) Statistical mechanics of semiconductors (82D37)

Abstract: An implicit Euler finite-volume scheme for a spinorial matrix drift-diffusion model for semiconductors is analyzed. The model consists of strongly coupled parabolic equations for the electron density matrix or, alternatively, of weakly coupled equations for the charge and spin-vector densities, coupled to the Poisson equation for the elec-tric potential. The equations are solved in a bounded domain with mixed Dirichlet-Neumann boundary conditions. The charge and spin-vector fluxes are approximated by a Scharfetter-Gummel discretization. The main features of the numerical scheme are the preservation of positivity and L $infty$ bounds and the dissipation of the discrete free energy. The existence of a bounded discrete solution and the monotonicity of the discrete free energy are proved. For undoped semiconductor materials, the numerical scheme is uncon-ditionally stable. The fundamental ideas are reformulations using spin-up and spin-down densities and certain projections of the spin-vector density, free energy estimates, and a discrete Moser iteration. Furthermore, numerical simulations of a simple ferromagnetic-layer field-effect transistor in two space dimensions are presented.

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Cites work

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Cited in

(12)

• A structure preserving hybrid finite volume scheme for semiconductor models with magnetic field on general meshes
• A convergent finite volume scheme for dissipation driven models with volume filling constraint
• Computational and analytical comparison of flux discretizations for the semiconductor device equations beyond Boltzmann statistics
• Large-time asymptotics for a matrix spin drift-diffusion model
• A finite-volume scheme for the multidimensional quantum drift-diffusion model for semiconductors
• Bounded weak solutions to a matrix drift-diffusion model for spin-coherent electron transport in semiconductors
• Uniform second order convergence of a complete flux scheme on unstructured 1D grids for a singularly perturbed advection-diffusion equation and some multidimensional extensions
• A discrete Bakry-Emery method and its application to the porous-medium equation
• A weighted hybridizable discontinuous Galerkin method for drift-diffusion problems
• Analysis of a spin-polarized drift-diffusion model
• scientific article; zbMATH DE number 193955 (Why is no real title available?)
• Quantum drift-diffusion equations for a two-dimensional electron gas with spin-orbit interaction

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