Voltage-current characteristics of a 𝑝𝑛-diode from a drift-diffusion model with nonlinear diffusion

DOI10.1090/QAM/1486544MaRDI QIDQ4380293zbMATH OpenOpenAlexFDO

Authors Ansgar Jüngel, Christian Schmeiser

Publication date 7 April 1999

Published in Quarterly of Applied Mathematics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1090/qam/1486544

zbMATH Keywords

degenerate elliptic equationssemiconductorsdrift-diffusion model

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Free boundary problems for PDEs (35R35) Motion of charged particles (78A35)

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Cited in

(8)

• The transient behaviour of multidimensional PN-diodes in low injection
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• Unipolar Drift-Diffusion Simulation of S-Shaped Current-Voltage Relations for Organic Semiconductor Devices
• THE SWITCHING BEHAVIOR OF A ONE-DIMENSIONAL PN-DIODE IN LOW INJECTION
• Multiple steady state solutions in a multi-junction structure
• Small-signal fractional-order model of PN junction long-base diode
• Theory of the flow of electrons and holes in Germanium and other semiconductors

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