scientific article; zbMATH DE number 1292780
From MaRDI portal
Publication:4244433
Recommendations
- EXISTENCE OF STATIONARY SOLUTIONS TO AN ENERGY DRIFT-DIFFUSION MODEL FOR SEMICONDUCTOR DEVICES
- GLOBAL EXISTENCE AND ASYMPTOTIC BEHAVIOR FOR A SEMICONDUCTOR DRIFT-DIFFUSION-POISSON MODEL
- Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate
- Global solutions of the time-dependent drift-diffusion semiconductor equations
Cited in
(26)- On a Nonlinear Integrodifferential Drift-Diffusion Semiconductor Model
- Asymptotic behavior of the drift-diffusion semiconductor equations
- Nonlinear diffusion, boundary layers and nonsmoothness: analysis of challenges in drift-diffusion semiconductor simulations
- A Nonlinear Drift ‐ Diffusion System with Electric Convection Arising in Electrophoretic and Semiconductor Modeling
- scientific article; zbMATH DE number 3919738 (Why is no real title available?)
- QUALITATIVE BEHAVIOR OF SOLUTIONS OF A DEGENERATE NONLINEAR DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS
- scientific article; zbMATH DE number 665489 (Why is no real title available?)
- scientific article; zbMATH DE number 4106228 (Why is no real title available?)
- Time-dependent solutions of a nonlinear system arising in semiconductor theory
- New solutions for the quantum drift–diffusion model of semiconductors
- Voltage-current characteristics of a 𝑝𝑛-diode from a drift-diffusion model with nonlinear diffusion
- scientific article; zbMATH DE number 665497 (Why is no real title available?)
- scientific article; zbMATH DE number 799725 (Why is no real title available?)
- Asymptotic behavior of solutions for the one-dimensional drift-diffusion model in the quarter plane
- Numerical analysis of nonlinear model of excited carrier decay
- Well-posedness for the drift-diffusion system in \(L^p\) arising from the semiconductor device simulation
- Factorization techniques for the nonlinear model of quasi-stationary processes in crystalline semiconductors
- scientific article; zbMATH DE number 5679679 (Why is no real title available?)
- EXISTENCE OF STATIONARY SOLUTIONS TO AN ENERGY DRIFT-DIFFUSION MODEL FOR SEMICONDUCTOR DEVICES
- SECOND ORDER BOUNDARY CONDITIONS FOR THE DRIFT-DIFFUSION EQUATIONS OF SEMICONDUCTORS
- Modelling unsteady processes in semiconductors using a non-linear Sobolev equation
- scientific article; zbMATH DE number 978586 (Why is no real title available?)
- GLOBAL EXISTENCE AND ASYMPTOTIC BEHAVIOR FOR A SEMICONDUCTOR DRIFT-DIFFUSION-POISSON MODEL
- Global solution to the drift-diffusion-Poisson system for semiconductors with nonlinear recombination-generation rate
- Vacuum solution and quasineutral limit of semiconductor drift-diffusion equation
- Nonhomogeneous initial-boundary value problems for nonlinear diffusion-convection equations
This page was built for publication:
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q4244433)