Nonlinear diffusion, boundary layers and nonsmoothness: analysis of challenges in drift-diffusion semiconductor simulations

DOI10.1016/J.CAMWA.2019.06.007MaRDI QIDQ2004436zbMATH OpenOpenAlexWikidataFDO

Authors Patricio Farrell, Dirk Peschka

Publication date 7 October 2020

Published in Computers & Mathematics with Applications (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1016/j.camwa.2019.06.007

zbMATH Keywords

convergence orderfinite element methodfinite volume methodnonlinear diffusion and diffusion enhancementScharfetter-Gummel schemevan Roosbroeck system for semiconductors

Mathematics Subject Classification ID

Finite volume methods for boundary value problems involving PDEs (65N08) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30)

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Cited in

(10)

• Modeling and numerical simulation of dissolved oxygen and biochemical oxygen demand concentrations with Holling type III kinetic relationships
• A physics-based strategy for choosing initial iterate for solving drift-diffusion equations
• DECREASING OF SPATIAL DIMENSION OF A SERIAL OF DIFFUSED-JUNCTION RECTIFIERS IN A MULTILAYER STRUCTURE IN ACCOUNT WITH NONLINEAR EFFECTS: OPTIMIZATION OF ANNEALING TIME
• scientific article; zbMATH DE number 1104479 (Why is no real title available?)
• Challenges in drift-diffusion semiconductor simulations
• Contrast structures in the reaction-advection-diffusion problem appearing in a drift-diffusion model of a semiconductor in the case of nonsmooth reaction
• Acceleration of solving drift-diffusion equations enabled by estimation of initial value at nonequilibrium
• A robust hybridizable discontinuous Galerkin scheme with harmonic averaging technique for steady state of real-world semiconductor devices
• On a weak periodic internal layer in a problem with a discontinuous reaction
• A new numerical strategy for the drift-diffusion equations based on bridging the hybrid mixed and exponential fitted methods

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