Challenges in drift-diffusion semiconductor simulations

DOI10.1007/978-3-030-43651-3_58MaRDI QIDQ5117487zbMATH OpenOpenAlexFDO

Authors Patricio Farrell, Dirk Peschka

Publication date 25 August 2020

Published in Finite Volumes for Complex Applications IX - Methods, Theoretical Aspects, Examples (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1007/978-3-030-43651-3_58

zbMATH Keywords

convergence orderdiffusion enhancementdrift-diffusionfinite element methodfinite volume methodnonlinear diffusionScharfetter-Gummel schemesemiconductorvan Roosbroeck system

Mathematics Subject Classification ID

PDEs in connection with statistical mechanics (35Q82) Finite volume methods for boundary value problems involving PDEs (65N08) Stability and convergence of numerical methods for boundary value problems involving PDEs (65N12) Error bounds for boundary value problems involving PDEs (65N15) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Motion of charged particles (78A35) Statistical mechanics of semiconductors (82D37)

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Cites work

• A finite volume scheme for convection-diffusion equations with nonlinear diffusion derived from the Scharfetter-Gummel scheme
• Existence of Bounded Discrete Steady-State Solutions of the Van Roosbroeck System on Boundary Conforming Delaunay Grids
• Finite volume methods
• Nonlinear diffusion, boundary layers and nonsmoothness: analysis of challenges in drift-diffusion semiconductor simulations

Cited in

(4)

• Nonlinear diffusion, boundary layers and nonsmoothness: analysis of challenges in drift-diffusion semiconductor simulations
• Drift velocity in GaN semiconductors: Monte Carlo simulation and comparison with experimental measurements
• A fast and robust numerical scheme for solving models of charge carrier transport and ion vacancy motion in perovskite solar cells
• Unipolar Drift-Diffusion Simulation of S-Shaped Current-Voltage Relations for Organic Semiconductor Devices

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