Acceleration of solving drift-diffusion equations enabled by estimation of initial value at nonequilibrium

DOI10.3934/NHM.2024020MaRDI QIDQ6572242zbMATH OpenFDO

Authors Chunlin Du, Yu Zhang, Haolan Qu, Haowen Guo, Xinbo Zou

Publication date 15 July 2024

Published in Networks and Heterogeneous Media (Search for Journal in Brave)

Full work available at URL https://doi.org/10.3934/NHM.2024020

zbMATH Keywords

drift-diffusion equationsfinite element methodnonequilibrium initial guessnonlinear iterationsemiconductor device simulation

Mathematics Subject Classification ID

PDEs in connection with semiconductor devices (35Q81) Numerical analysis (65-XX)

Cites work

• A class of finite element methods with averaging techniques for solving the three-dimensional drift-diffusion model in semiconductor device simulations
• A physics-based strategy for choosing initial iterate for solving drift-diffusion equations
• Entropy method and asymptotic behaviours of finite volume schemes
• Finite elements and fast iterative solvers. With applications in incompressible fluid dynamics
• Finite Volume Methods for Convection-Diffusion Problems
• Finite volume scheme for multi-dimensional drift-diffusion equations and convergence analysis
• Nonlinear diffusion, boundary layers and nonsmoothness: analysis of challenges in drift-diffusion semiconductor simulations
• Semiconductor device modelling from the numerical point of view

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