Semiconductor device modelling from the numerical point of view
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bipolar transistorcontinuity equationscontraction mapping principleelectrostatic potentialNewton's methodnon-linear Poisson equationresurf devicesemiconductor device modelling
Partial differential equations of mathematical physics and other areas of application (35Q99) Numerical solution of discretized equations for boundary value problems involving PDEs (65N22) Applications to the sciences (65Z05) Electro- and magnetostatics (78A30) Technical applications of optics and electromagnetic theory (78A55)
Recommendations
- scientific article; zbMATH DE number 3844984
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Cites work
- A QUALITATIVE ANALYSIS OF THE FUNDAMENTAL SEMICONDUCTOR DEVICE EQUATIONS
- ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY CONTINUITY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, II
- ANALYSIS OF A DISCRETIZATION ALGORITHM FOR STATIONARY EQUATIONS IN SEMICONDUCTOR DEVICE MODELS, III
- CGS
- scientific article; zbMATH DE number 3844984 (Why is no real title available?)
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Cited in
(67)- Numerical solution of singularly perturbed convection-diffusion problem using parameter uniform B-spline collocation method
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- Static and dynamic numerical device modeling for transient circuit simulation
- A new viewpoint on mixed elements
- Strategies for mesh-handling and model specification within a highly flexible simulation framework
- On the numerical solution of the three-dimensional semiconductor device equations on vector-concurrent computers
- A numerical study on Neumann-Neumann and FETI methods for \(hp\) approximations on geometrically refined boundary layer meshes in two dimensions.
- Domain decomposition technique for the continuity equations of semiconductor device models
- Adaptive multigrid applied to a bipolar transistor problem
- Massively parallel methods for semiconductor device modelling
- Generalized conjugate gradient squared
- Enriched residual free bubbles for semiconductor device simulation
- A new upwind difference analysis of an exponentially graded Bakhvalov-type mesh for singularly perturbed elliptic convection-diffusion problems
- Robust higher order finite difference scheme for singularly perturbed turning point problem with two outflow boundary layers
- Hexahedral finite elements for the stationary semiconductor device equations
- Electro-thermo-chemical computational models for 3D heterogeneous semiconductor device simulation
- On the composite discontinuous Galerkin method for simulations of electric properties of semiconductor devices
- Simulation of visible and ultra-violet group-III nitride light emitting diodes
- Convexity of trace functionals and Schrödinger operators
- Finite element approximation of electrostatic potential in one dimensional multilayer structures with quantized electronic charge
- A uniformly convergent quadratic \(B\)-spline based scheme for singularly perturbed degenerate parabolic problems
- A physics-based strategy for choosing initial iterate for solving drift-diffusion equations
- An efficient numerical technique for two-parameter singularly perturbed problems having discontinuity in convection coefficient and source term
- The numerical simulation of the p-n barrier capacity in semiconductor device structures
- Numerical modeling of varizone semiconductor devices
- scientific article; zbMATH DE number 6694738 (Why is no real title available?)
- scientific article; zbMATH DE number 4133448 (Why is no real title available?)
- The Midpoint Upwind Finite Difference Scheme for Time-Dependent Singularly Perturbed Convection-Diffusion Equations on Non-Uniform Mesh
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- ON THE STABILITY OF TIME DISCRETISATIONS FOR THE SEMICONDUCTOR EQUATIONS
- scientific article; zbMATH DE number 4213381 (Why is no real title available?)
- Crank–Nicolson finite difference method based on a midpoint upwind scheme on a non-uniform mesh for time-dependent singularly perturbed convection–diffusion equations
- Mathematical and Numerical Modelling of Heterostructure Semiconductor Devices: From Theory to Programming
- scientific article; zbMATH DE number 4048978 (Why is no real title available?)
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- ADVANCED NUMERICAL TECHNIQUES IN SEMICONDUCTOR DEVICE SIMULATION
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- A QUANTUM TRANSMITTING SCHRÖDINGER–POISSON SYSTEM
- THE INCLUSION OF A FINITE CAPTURE TIME IN NUMERICAL DEVICE SIMULATION
- MIXED FINITE ELEMENT SIMULATION OF HETEROJUNCTION STRUCTURES INCLUDING A BOUNDARY LAYER MODEL FOR THE QUASI‐FERMI LEVELS
- Second-order parameter-uniform finite difference scheme for singularly perturbed parabolic problem with a boundary turning point
- scientific article; zbMATH DE number 7544427 (Why is no real title available?)
- scientific article; zbMATH DE number 5026528 (Why is no real title available?)
- Collocation method using artificial viscosity for solving stiff singularly perturbed turning point problem having twin boundary layers
- Preconditioned CG-type methods for solving the coupled system of fundamental semiconductor equations
- A brief survey on numerical methods for solving singularly perturbed problems
- Less Emphasis on Hard Regions: Curriculum Learning of PINNs for Singularly Perturbed Convection-Diffusion-Reaction Problems
- A variable stepsize hybrid block optimized technique for integrating a class of singularly perturbed parabolic problems
- Acceleration of solving drift-diffusion equations enabled by estimation of initial value at nonequilibrium
- An \(\varepsilon \)-uniformly convergent method for singularly perturbed parabolic problems exhibiting boundary layers
- Finite difference wavelet-Galerkin method for solving singularly perturbed parabolic problems
- Non-standard finite-difference scheme for singularly perturbed parabolic convection-diffusion problem with boundary turning points
- A comparison of formulations and non-linear solvers for computational modelling of semiconductor devices
- A high-order numerical method for semilinear convection-diffusion equation on Bakhvalov-type mesh
- A new numerical strategy for the drift-diffusion equations based on bridging the hybrid mixed and exponential fitted methods
- Moore's law and numerical modeling
- Robust spectral preconditioning for high-Péclet number convection-diffusion
- Derivation of a quasi-linear second-order elliptic-parabolic model for the efficiency of silicon solar cells
- Numerical solutions of singularly perturbed one-dimensional parabolic convection-diffusion problems by the Bessel collocation method
- A nonlinear multigrid method for one-dimensional semiconductor device simulation: Results for the diode
- Numerical simulation of semiconductor devices
- A uniformly convergent B-spline collocation method on a nonuniform mesh for singularly perturbed one-dimensional time-dependent linear convection-diffusion problem
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