scientific article; zbMATH DE number 880379

MaRDI QIDQ4877911zbMATH OpenFDO

Authors Thomas Kerkhoven

Publication date 21 May 1996

zbMATH Keywords

Debije lengthdrift-diffusion semiconductor modelquasi-Fermi levelsstability

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Applications to the sciences (65Z05) Technical applications of optics and electromagnetic theory (78A55)

Recommendations

• Numerical Approximation of a Drift‐Diffusion Model for Semiconductors with Nonlinear Diffusion
• scientific article; zbMATH DE number 4025935
• Voltage-current characteristics of a 𝑝𝑛-diode from a drift-diffusion model with nonlinear diffusion
• Quasi-neutral limit of a nonlinear drift diffusion model for semiconductors
• Quasineutral limit of a standard drift diffusion model for semiconductors.

Cited in

(8)

• Nonlinear diffusion, boundary layers and nonsmoothness: analysis of challenges in drift-diffusion semiconductor simulations
• NONLINEAR CLOSURE RELATIONS: A CASE FROM SEMICONDUCTORS
• Dissipativity as a unified approach to sandberg-willson-type properties of non-linear transistor networks
• scientific article; zbMATH DE number 978586 (Why is no real title available?)
• Voltage-current characteristics of a 𝑝𝑛-diode from a drift-diffusion model with nonlinear diffusion
• scientific article; zbMATH DE number 7612044 (Why is no real title available?)
• scientific article; zbMATH DE number 5026528 (Why is no real title available?)
• Modelling unsteady processes in semiconductors using a non-linear Sobolev equation

This page was built for publication:

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q4877911)