Modelling unsteady processes in semiconductors using a non-linear Sobolev equation

DOI10.1070/IM2014V078N03ABEH002692MaRDI QIDQ5495173zbMATH OpenOpenAlexFDO

Authors A. I. Aristov

Publication date 31 July 2014

Published in Izvestiya: Mathematics (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1070/im2014v078n03abeh002692

zbMATH Keywords

bounds for th lifespanmethod of energy estimates

Mathematics Subject Classification ID

Blow-up in context of PDEs (35B44) Initial-boundary value problems for second-order parabolic equations (35K20) Ultraparabolic equations, pseudoparabolic equations, etc. (35K70) Integro-partial differential equations (35R09)

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Cited in

(6)

• On the initial boundary value problem for a nonlinear nonhomogeneous equation of Sobolev type
• Solvability of the boundary value problem for the equation of transition processes in semiconductors with a fractional time derivative
• Factorization techniques for the nonlinear model of quasi-stationary processes in crystalline semiconductors
• Research of one mathematical model of the distribution of potentials in a crystalline semiconductor
• A (3+1)-dimensional equation of plasma drift waves perturbed by a singular potential in an infinite parallelepiped
• A study on the numerical solution of the Sobolev equation with a Burgers-type nonlinearity on two-dimensional irregular domains using the local RBF partition of unity method

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