Modelling nonlocal processes in semiconductor devices with exponential difference schemes
DOI10.1023/A:1004783723500zbMATH Open0967.78012OpenAlexW11513615WikidataQ56954136 ScholiaQ56954136MaRDI QIDQ1581047FDOQ1581047
Authors: Hao He, R. V. N. Melnik
Publication date: 5 September 2001
Published in: Journal of Engineering Mathematics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1023/a:1004783723500
Recommendations
stabilitycontinuity equationstime relaxationsemiconductor devicestransport phenomenaenergy balance equationsexponential difference schemesnonequilibrium physical processesnonlocal quasi-hydrodynamic mathematical models
Finite difference methods applied to problems in optics and electromagnetic theory (78M20) Statistical mechanics of semiconductors (82D37) Mathematically heuristic optics and electromagnetic theory (must also be assigned at least one other classification number in Section 78-XX) (78A97)
Cited In (6)
- A new combined finite element-upwind finite volume method for convection-dominated diffusion problems
- Energy transport in semiconductor devices
- An exponentially-fitted method for singularly perturbed, one-dimensional, parabolic problems
- Modelling unsteady processes in semiconductors using a non-linear Sobolev equation
- A fast algorithm to compute the moments of the exponential function for application to semiconductor modelling
- Title not available (Why is that?)
Uses Software
This page was built for publication: Modelling nonlocal processes in semiconductor devices with exponential difference schemes
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q1581047)