Highly accurate quadrature-based scharfetter-gummel schemes for charge transport in degenerate semiconductors
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Cites work
- A finite volume scheme for convection-diffusion equations with nonlinear diffusion derived from the Scharfetter-Gummel scheme
- A finite volume scheme for nonlinear parabolic equations derived from one-dimensional local Dirichlet problems
- A method for numerical integration on an automatic computer
- Comparison and numerical treatment of generalised Nernst-Planck models
- Computational and analytical comparison of flux discretizations for the semiconductor device equations beyond Boltzmann statistics
- Error Estimation in the Clenshaw-Curtis Quadrature Formula
- scientific article; zbMATH DE number 194141 (Why is no real title available?)
- scientific article; zbMATH DE number 3273551 (Why is no real title available?)
- Numerical Methods in Scientific Computing, Volume I
- Semiconductor Device Simulation
- Some Modified Matrix Eigenvalue Problems
- Theory of the flow of electrons and holes in Germanium and other semiconductors
Cited in
(7)- Nonlinear diffusion, boundary layers and nonsmoothness: analysis of challenges in drift-diffusion semiconductor simulations
- High-order Scharfetter-Gummel-based schemes and applications to gas discharge modeling
- A class of finite element methods with averaging techniques for solving the three-dimensional drift-diffusion model in semiconductor device simulations
- Generalized Scharfetter-Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient
- An Approximate Two-Point Dirichlet Flux for Quasilinear Convection Diffusion Equations
- Forward lateral photovoltage scanning problem: perturbation approach and existence-uniqueness analysis
- Accurate computation of numerical drift-diffusion fluxes in arbitrarily degenerate gases
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