Highly accurate quadrature-based scharfetter-gummel schemes for charge transport in degenerate semiconductors

DOI10.1016/j.cpc.2018.10.004OpenAlexW2896063548MaRDI QIDQ6101933

Jürgen Fuhrmann, Patricio Farrell, Matteo Patriarca, Thomas Koprucki

Publication date: 5 May 2023

Published in: Computer Physics Communications (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1016/j.cpc.2018.10.004

zbMATH Keywords

finite volume methodthermodynamic consistencyScharfetter-Gummel schemediffusion enhancementvan Roosbroeck systemnon-Boltzmann statistics

Mathematics Subject Classification ID

Numerical analysis (65-XX) Statistical mechanics, structure of matter (82-XX)

Related Items (5)

High-order Scharfetter-Gummel-based schemes and applications to gas discharge modeling ⋮ A class of finite element methods with averaging techniques for solving the three-dimensional drift-diffusion model in semiconductor device simulations ⋮ An Approximate Two-Point Dirichlet Flux for Quasilinear Convection Diffusion Equations ⋮ Generalized Scharfetter-Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient ⋮ Nonlinear diffusion, boundary layers and nonsmoothness: analysis of challenges in drift-diffusion semiconductor simulations

Cites Work

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• Semiconductor Device Simulation
• Theory of the Flow of Electrons and Holes in Germanium and Other Semiconductors
• Error Estimation in the Clenshaw-Curtis Quadrature Formula
• Some Modified Matrix Eigenvalue Problems

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