Highly accurate quadrature-based scharfetter-gummel schemes for charge transport in degenerate semiconductors
DOI10.1016/J.CPC.2018.10.004OpenAlexW2896063548MaRDI QIDQ6101933FDOQ6101933
Authors: Matteo Patriarca, Patricio Farrell, Jürgen Fuhrmann, Thomas Koprucki
Publication date: 5 May 2023
Published in: Computer Physics Communications (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.cpc.2018.10.004
finite volume methodScharfetter-Gummel schemethermodynamic consistencydiffusion enhancementvan Roosbroeck systemnon-Boltzmann statistics
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Cited In (6)
- Nonlinear diffusion, boundary layers and nonsmoothness: analysis of challenges in drift-diffusion semiconductor simulations
- High-order Scharfetter-Gummel-based schemes and applications to gas discharge modeling
- A class of finite element methods with averaging techniques for solving the three-dimensional drift-diffusion model in semiconductor device simulations
- Forward lateral photovoltage scanning problem: perturbation approach and existence-uniqueness analysis
- An Approximate Two-Point Dirichlet Flux for Quasilinear Convection Diffusion Equations
- Generalized Scharfetter-Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient
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