Semiconductor Device Simulation

DOI10.1137/0904031MaRDI QIDQ3670497zbMATH OpenOpenAlexFDO

Authors Wolfgang Fichtner, Randolph E. Bank, Donald J. Rose

Publication date 1983

Published in SIAM Journal on Scientific and Statistical Computing (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1137/0904031

zbMATH Keywords

finite-differencefinite-elementMaxwell equationsnumerical resultssemiconductor equationsVLSI device structures

Mathematics Subject Classification ID

Partial differential equations of mathematical physics and other areas of application (35Q99) Numerical solution of discretized equations for boundary value problems involving PDEs (65N22) Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Applications to the sciences (65Z05) Electromagnetic theory (general) (78A25) Technical applications of optics and electromagnetic theory (78A55)

Cited in

(8)

• Adaptive multigrid applied to a bipolar transistor problem
• An approach to the Gummel map by vector extrapolation methods
• A physics-based strategy for choosing initial iterate for solving drift-diffusion equations
• Parallel adaptive finite element algorithms for solving the coupled electro-diffusion equations
• MMICs time-domain electrical physical simulator adapted to the parallel computation
• Evolution systems in semiconductor device modeling: A cyclic uncoupled line analysis for the gummel map
• Highly accurate quadrature-based scharfetter-gummel schemes for charge transport in degenerate semiconductors
• The alternate-block-factorization procedure for systems of partial differential equations

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