EXCITON-CATALYZED RECOMBINATION-GENERATION OF ELECTRONS AND HOLES IN SEMICONDUCTORS: A KINETIC APPROACH

DOI10.1142/S0217984912500728zbMath1263.82066OpenAlexW2036559018MaRDI QIDQ4911459

Alberto Rossani

Publication date: 15 March 2013

Published in: Modern Physics Letters B (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1142/s0217984912500728

zbMATH Keywords

kinetic theorysemiconductorsexcitons

Mathematics Subject Classification ID

Statistical mechanics of semiconductors (82D37)

Related Items (1)

A complete multifluid model for bipolar semiconductors, with interacting carriers, phonons, and photons

Cites Work

• An energy-transport model for semiconductors derived from the Boltzmann equation.
• Band-trap capture and emission in the generalized kinetic theory of electrons and holes
• On a hierarchy of macroscopic models for semiconductors
• On a System of Nonlinear Boltzmann Equations of Semiconductor Physics

This page was built for publication: EXCITON-CATALYZED RECOMBINATION-GENERATION OF ELECTRONS AND HOLES IN SEMICONDUCTORS: A KINETIC APPROACH