The Drift–Diffusion Limit for Electron–Phonon Interaction in Semiconductors
From MaRDI portal
Publication:4353981
DOI10.1142/S0218202597000384zbMath0884.45006MaRDI QIDQ4353981
Peter Alexander Markowich, Christian Schmeiser
Publication date: 18 March 1998
Published in: Mathematical Models and Methods in Applied Sciences (Search for Journal in Brave)
scattering; electron-phonon interaction; semiconductor Boltzmann equation; drift-diffusion limit; semiconductor crystal
Related Items
A review of hydrodynamical models for semiconductors: Asymptotic behavior, INTERPLAY OF ELASTIC AND INELASTIC SCATTERING OPERATORS IN EXTENDED KINETIC MODELS AND THEIR HYDRODYNAMIC LIMITS: REFERENCE MANUAL, MATHEMATICAL PROPERTIES OF INELASTIC SCATTERING MODELS IN LINEAR KINETIC THEORY, CONSERVATIVE AND NON-CONSERVATIVE BOLTZMANN-TYPE MODELS OF SEMICONDUCTOR THEORY, Space homogeneous solutions of the linear semiconductor Boltzmann equation, Convergence of a Direct Simulation Monte Carlo Method for the Space Inhomogeneous Semiconductor Boltzmann Equations with Multi-valley, New generation theorems in transport theory, An energy-transport model for semiconductors derived from the Boltzmann equation., The Existence of Moments of Solutions to Transport Equations with Inelastic Scattering and their Application in the Asymptotic Analysis, On Well-Posedness of a Boltzmann-Like Semiconductor Model
