An adaptive remeshing technique based on hierarchical error estimates for simulation of semiconductor devices

DOI10.1002/JNM.520zbMATH Open1170.78448OpenAlexW1996638585MaRDI QIDQ4458779FDOQ4458779

Authors: Geng Yang, Ru-Chuan Wang, Shaodi Wang 

Publication date: 15 March 2004

Published in: International Journal of Numerical Modelling: Electronic Networks, Devices and Fields (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1002/jnm.520

Recommendations

• scientific article; zbMATH DE number 3986596
• A posteriori error control in numerical simulations of semiconductor nanodevices
• scientific article; zbMATH DE number 2148202
• An iterative method for adaptive finite element solutions of an energy transport model of semiconductor devices
• An a posteriori error estimate for scanning electron microscope simulation with adaptive mesh refinement

zbMATH Keywords

hierarchical error estimateshydrodynamic modeladaptive mesh techniqueMESFET's

Mathematics Subject Classification ID

Cited In (2)

• An a posteriori error estimate for scanning electron microscope simulation with adaptive mesh refinement
• A posteriori error control in numerical simulations of semiconductor nanodevices

This page was built for publication: An adaptive remeshing technique based on hierarchical error estimates for simulation of semiconductor devices

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q4458779)