Simulation of the hydrodynamic model of semiconductor devices by a finite element method

DOI10.1108/03321649610130209MaRDI QIDQ4332191zbMATH OpenOpenAlexFDO

Authors Geng Yang, Yves Perréal, M. Fortin

Publication date 28 August 2003

Published in COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1108/03321649610130209

Mathematics Subject Classification ID

Finite element, Rayleigh-Ritz and Galerkin methods for boundary value problems involving PDEs (65N30) Statistical mechanics of semiconductors (82D37)

Cites work

• scientific article; zbMATH DE number 3529634 (Why is no real title available?)
• Compressible viscous flow calculations using compatible finite element approximations
• GMRES: A Generalized Minimal Residual Algorithm for Solving Nonsymmetric Linear Systems
• Hybrid Krylov Methods for Nonlinear Systems of Equations
• MULTI‐DIMENSIONAL DISCRETIZATION SCHEME FOR THE HYDRODYNAMIC MODEL OF SEMICONDUCTOR DEVICES
• The finite element method with Lagrangian multipliers

Cited in

(2)

• Least-squares finite element formulation for hydrodynamic modeling of semiconductor devices.
• An iterative method for adaptive finite element solutions of an energy transport model of semiconductor devices

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