MULTI‐DIMENSIONAL DISCRETIZATION SCHEME FOR THE HYDRODYNAMIC MODEL OF SEMICONDUCTOR DEVICES
DOI10.1108/EB010024zbMATH Open0622.76085OpenAlexW2078745847MaRDI QIDQ3760198FDOQ3760198
Authors:
Publication date: 1986
Published in: COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1108/eb010024
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- scientific article; zbMATH DE number 176679
boundary conditionsdiscretization techniqueScharfetter-Gummel schemePoisson's equationdrift-diffusion modelbalance equationssemiconductor devicescarrier dynamicsconvection phenomenamulti-dimensional, steady-state hydrodynamic model
Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Classical equilibrium statistical mechanics (general) (82B05) Transport processes in time-dependent statistical mechanics (82C70)
Cites Work
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- Field equations for charge conducting fluids in electromagnetic fields
- A new approach to numerical simulation of charge transport in double gate-MOSFET
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- Title not available (Why is that?)
- Energy estimates for a one-dimensional hydrodynamic model of semiconductors
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- Charge transport in an incompressible fluid: new devices in computational electronics
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- Generalized Scharfetter-Gummel schemes for electro-thermal transport in degenerate semiconductors using the Kelvin formula for the Seebeck coefficient
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