SIMULATION OF n+−n−n+ DEVICES BY A HYDRODYNAMIC MODEL: SUBSONIC AND SUPERSONIC FLOWS

DOI10.1108/EB010135MaRDI QIDQ4865714zbMATH OpenOpenAlexFDO

Authors Angelo Marcello Anile, C. MacCora, Rosa M. Pidatella

Publication date 22 August 1996

Published in COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1108/eb010135

zbMATH Keywords

effects of viscosityextended thermodynamics

Mathematics Subject Classification ID

Finite difference methods applied to problems in fluid mechanics (76M20) Technical applications of optics and electromagnetic theory (78A55)

Cites work

• Global approximate Newton methods
• MULTI‐DIMENSIONAL DISCRETIZATION SCHEME FOR THE HYDRODYNAMIC MODEL OF SEMICONDUCTOR DEVICES
• Space homogeneous solutions of the Boltzmann equation describing electron-phonon interactions in semiconductors
• STATIONARY SOLUTIONS OF HYDRODYNAMIC MODELS FOR SEMICONDUCTOR DEVICE SIMULATION
• Thermodynamic derivation of the hydrodynamical model for charge transport in semiconductors

Cited in

(5)

• Asymptotic waves for the hydrodynamical model of semiconductors
• Semiconductor device simulation using a viscous hydrodynamic model.
• Extended thermodynamics tested beyond the linear regime: The case of electron transport in silicon semiconductors
• Numerical investigation of a gas dynamic model for charge transport in semiconductors
• Numerical solutions of a viscous‐hydrodynamic model for semiconductors: the supersonic case

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