SIMULATION OF n+−n−n+ DEVICES BY A HYDRODYNAMIC MODEL: SUBSONIC AND SUPERSONIC FLOWS

DOI10.1108/eb010135zbMath0843.76056OpenAlexW1984161301MaRDI QIDQ4865714

Angelo Marcello Anile, C. MacCora, R. M. Pidatella

Publication date: 22 August 1996

Published in: COMPEL - The international journal for computation and mathematics in electrical and electronic engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/eb010135

zbMATH Keywords

extended thermodynamicseffects of viscosity

Mathematics Subject Classification ID

Finite difference methods applied to problems in fluid mechanics (76M20) Technical applications of optics and electromagnetic theory (78A55)

Related Items (5)

Numerical solutions of a viscous‐hydrodynamic model for semiconductors: the supersonic case ⋮ Asymptotic waves for the hydrodynamical model of semiconductors ⋮ Extended thermodynamics tested beyond the linear regime: The case of electron transport in silicon semiconductors ⋮ Numerical investigation of a gas dynamic model for charge transport in semiconductors ⋮ Semiconductor device simulation using a viscous hydrodynamic model.

Cites Work

• Global approximate Newton methods
• Thermodynamic derivation of the hydrodynamical model for charge transport in semiconductors
• MULTI‐DIMENSIONAL DISCRETIZATION SCHEME FOR THE HYDRODYNAMIC MODEL OF SEMICONDUCTOR DEVICES
• Space homogeneous solutions of the Boltzmann equation describing electron-phonon interactions in semiconductors
• STATIONARY SOLUTIONS OF HYDRODYNAMIC MODELS FOR SEMICONDUCTOR DEVICE SIMULATION

This page was built for publication: SIMULATION OF n+−n−n+ DEVICES BY A HYDRODYNAMIC MODEL: SUBSONIC AND SUPERSONIC FLOWS