Numerical investigation of a gas dynamic model for charge transport in semiconductors

DOI10.1108/03321649910236966zbMATH Open0921.65083OpenAlexW2008323620WikidataQ127705477 ScholiaQ127705477MaRDI QIDQ4243374FDOQ4243374

Authors: A. A. Iohrdanidy, A. M. Blokhin 

Publication date: 29 September 1999

Published in: COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/03321649910236966

zbMATH Keywords

gas dynamic modelcharge transport in semiconductorsdiodeelectron flow

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Motion of charged particles (78A35) Applications to the sciences (65Z05)

Cites Work

• High resolution schemes for hyperbolic conservation laws
• Thermodynamic derivation of the hydrodynamical model for charge transport in semiconductors
• SIMULATION OF n+−n−n+ DEVICES BY A HYDRODYNAMIC MODEL: SUBSONIC AND SUPERSONIC FLOWS

Cited In (6)

• Asymptotic stability of the equilibrium state for the hydrodynamical model of charge transport in semiconductors based on the maximum entropy principle
• Numerical simulation of the distribution of charge carrier in nanosized semiconductor heterostructures with account for polarization effects
• Global existence for the system of the macroscopic balance equations of charge transport in semiconductors
• High field fluid dynamical models for the transport of charge carriers in semiconductors
• Nonlinear asymptotic stability of the equilibrium state for the MEP model of charge transport in semiconductors
• Study of the jump conditions for the 2D MEP hydrodynamical model of charge transport in semiconductors

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