Numerical investigation of a gas dynamic model for charge transport in semiconductors

DOI10.1108/03321649910236966MaRDI QIDQ4243374zbMATH OpenOpenAlexWikidataFDO

Authors A. A. Iohrdanidy, A. M. Blokhin

Publication date 29 September 1999

Published in COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1108/03321649910236966

zbMATH Keywords

gas dynamic modelcharge transport in semiconductorsdiodeelectron flow

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Motion of charged particles (78A35) Applications to the sciences (65Z05)

Cites work

• High resolution schemes for hyperbolic conservation laws
• SIMULATION OF n+−n−n+ DEVICES BY A HYDRODYNAMIC MODEL: SUBSONIC AND SUPERSONIC FLOWS
• Thermodynamic derivation of the hydrodynamical model for charge transport in semiconductors

Cited in

(6)

• Asymptotic stability of the equilibrium state for the hydrodynamical model of charge transport in semiconductors based on the maximum entropy principle
• Numerical simulation of the distribution of charge carrier in nanosized semiconductor heterostructures with account for polarization effects
• Global existence for the system of the macroscopic balance equations of charge transport in semiconductors
• High field fluid dynamical models for the transport of charge carriers in semiconductors
• Nonlinear asymptotic stability of the equilibrium state for the MEP model of charge transport in semiconductors
• Study of the jump conditions for the 2D MEP hydrodynamical model of charge transport in semiconductors

This page was built for publication: Numerical investigation of a gas dynamic model for charge transport in semiconductors

Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q4243374)