ENERGY‐MOMENTUM TRANSPORT MODEL SUITABLE FOR SMALL GEOMETRY SILICON DEVICE SIMULATION

DOI10.1108/EB010322zbMATH Open0725.65113OpenAlexW2087961629MaRDI QIDQ5203628FDOQ5203628

Authors: James W. Roberts, Savvas G. Chamberlain 

Publication date: 1990

Published in: COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1108/eb010322

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zbMATH Keywords

irregular spatial gridsmall geometry silicon device simulationtwo-carrier energy-momentum transport model

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) PDEs in connection with optics and electromagnetic theory (35Q60) Finite difference methods for boundary value problems involving PDEs (65N06) Applications to the sciences (65Z05)

Cites Work

• MULTI‐DIMENSIONAL DISCRETIZATION SCHEME FOR THE HYDRODYNAMIC MODEL OF SEMICONDUCTOR DEVICES

Cited In (3)

• Title not available (Why is that?)
• A NEW FINITE‐ELEMENT DISCRETIZATION TECHNIQUE FOR THE HYDRODYNAMIC FORMULATION OF ENERGY BALANCE EQUATIONS
• Accurate numerical models for simulation of radiation events in nano-scale semiconductor devices

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