ENERGY‐MOMENTUM TRANSPORT MODEL SUITABLE FOR SMALL GEOMETRY SILICON DEVICE SIMULATION

DOI10.1108/EB010322MaRDI QIDQ5203628zbMATH OpenOpenAlexFDO

Authors James W. Roberts, Savvas G. Chamberlain

Publication date 1990

Published in COMPEL: The International Journal for Computation and Mathematics in Electrical and Electronic Engineering (Search for Journal in Brave)

Full work available at URL https://doi.org/10.1108/eb010322

zbMATH Keywords

irregular spatial gridsmall geometry silicon device simulationtwo-carrier energy-momentum transport model

Mathematics Subject Classification ID

Technical applications of optics and electromagnetic theory (78A55) PDEs in connection with optics and electromagnetic theory (35Q60) Finite difference methods for boundary value problems involving PDEs (65N06) Applications to the sciences (65Z05)

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Cites work

• MULTI‐DIMENSIONAL DISCRETIZATION SCHEME FOR THE HYDRODYNAMIC MODEL OF SEMICONDUCTOR DEVICES

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(3)

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• Accurate numerical models for simulation of radiation events in nano-scale semiconductor devices

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