Global solutions to a hydrodynamic model for semiconductors with velocity relaxation

DOI10.1007/s10473-023-0226-0MaRDI QIDQ2681436

Guoqiao You, Richard De la cruz, Xian-ting Wang, Yun-Guang Lu

Publication date: 3 February 2023

Published in: Acta Mathematica Scientia. Series B. (English Edition) (Search for Journal in Brave)

Full work available at URL: https://doi.org/10.1007/s10473-023-0226-0

zbMATH Keywords

hydrodynamic model; global \(L^\infty\) solution; two-carrier types; velocity relaxation

Mathematics Subject Classification ID

35L65: Hyperbolic conservation laws

65M12: Stability and convergence of numerical methods for initial value and initial-boundary value problems involving PDEs

78A35: Motion of charged particles

76N10: Existence, uniqueness, and regularity theory for compressible fluids and gas dynamics

Cites Work

• Unnamed Item
• Unnamed Item
• Unnamed Item
• Unnamed Item
• Global solutions to the Euler-Poisson equations of two-carrier types in one dimension
• Zero relaxation time limits to a hydrodynamic model of two carrier types for semiconductors
• Cauchy problem for isothermal system in a general nozzle with space-dependent friction
• Global solutions of the Cauchy problem to Euler-Poisson equations of two-carrier types
• MULTI‐DIMENSIONAL DISCRETIZATION SCHEME FOR THE HYDRODYNAMIC MODEL OF SEMICONDUCTOR DEVICES
• Weak solutions to a one-dimensional hydrodynamic model of two carrier types for semiconductors