Energy-Transport Models for Charge Carriers Involving Impact Ionization in Semiconductors
From MaRDI portal
Publication:4801424
DOI10.1081/TT-120019039zbMath1057.82015WikidataQ62568252 ScholiaQ62568252MaRDI QIDQ4801424
Pierre Degond, Isabelle Choquet, Christian Schmeiser
Publication date: 7 April 2003
Published in: Transport Theory and Statistical Physics (Search for Journal in Brave)
Statistical mechanics of semiconductors (82D37) Ionized gas flow in electromagnetic fields; plasmic flow (76X05)
Related Items (6)
A strong ionization model in plasma physics ⋮ Energy transport in semiconductor devices ⋮ Numerical scheme for the far-out-of-equilibrium time-dependent Boltzmann collision operator: 1D second-degree momentum discretisation and adaptive time stepping ⋮ Numerical solver for the out-of-equilibrium time dependent Boltzmann collision operator: application to 2D materials ⋮ A kinetic reaction model: decay to equilibrium and macroscopic limit ⋮ Hydrodynamic limit for an arc discharge at atmospheric pressure
This page was built for publication: Energy-Transport Models for Charge Carriers Involving Impact Ionization in Semiconductors
