On a drift-diffusion system for semiconductor devices

DOI10.1007/S00023-016-0493-6MaRDI QIDQ730133zbMATH OpenOpenAlexFDO

Authors Rafael Granero-Belinchón

Publication date 23 December 2016

Published in Annales Henri Poincaré (Search for Journal in Brave)

Full work available at URL https://arxiv.org/abs/1603.03839

zbMATH Keywords

asymptotic expansiondecay estimates in Sobolev spacesdrift-diffusion systemsfractional dissipationfractional Laplacianglobal existence of solutionsPoisson-Nernst-Planck equationssemiconductors

Mathematics Subject Classification ID

Functional-differential equations with fractional derivatives (34K37) Asymptotic behavior of solutions to PDEs (35B40) Asymptotic expansions of solutions to PDEs (35C20) PDEs in connection with statistical mechanics (35Q82) Fractional partial differential equations (35R11) Fractional processes, including fractional Brownian motion (60G22) Motion of charged particles (78A35) Statistical mechanics of semiconductors (82D37)

Abstract: In this note we study a fractional Poisson-Nernst-Planck equation modeling a semiconductor device. We prove several decay estimates for the Lebesgue and Sobolev norms in one, two and three dimensions. We also provide the first term of the asymptotic expansion as $tightarrowinfty$.

Review text

In the modeling of semiconductor devices, two nonlinear parabolic equations for the electron and hole densities are supplemented with an elliptic equation for the electrostatic potential (it states that a divergence of the related electrostatic potential depends on the difference of the relevant densities). A brief summary of the current state of art in the study of those Poisson-Nernst-Planck equations is given. In the present paper, the dissipation term in the parabolic equations is replaced by the fractional Laplacians (actually the Lévy generators) with different fractional powers. For such fractionally dissipative systems, the global existence of solutions is investigated and several decay estimates for the Lebesgue and Sobolev norms in one, two and three dimensions are established. The first term of the asymptotic expansion in the large-time limit is also provided.

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Cited in

(26)

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