On a drift-diffusion system for semiconductor devices

DOI10.1007/S00023-016-0493-6MaRDI QIDQ730133zbMATH OpenOpenAlexFDO

Authors Rafael Granero-Belinchón

Publication date 23 December 2016

Published in Annales Henri Poincaré (Search for Journal in Brave)

Full work available at URL https://arxiv.org/abs/1603.03839

zbMATH Keywords

asymptotic expansionfractional LaplacianPoisson-Nernst-Planck equationsfractional dissipationsemiconductorsglobal existence of solutionsdecay estimates in Sobolev spacesdrift-diffusion systems

Mathematics Subject Classification ID

Fractional processes, including fractional Brownian motion (60G22) Asymptotic behavior of solutions to PDEs (35B40) Asymptotic expansions of solutions to PDEs (35C20) PDEs in connection with statistical mechanics (35Q82) Fractional partial differential equations (35R11) Motion of charged particles (78A35) Functional-differential equations with fractional derivatives (34K37) Statistical mechanics of semiconductors (82D37)

Abstract: In this note we study a fractional Poisson-Nernst-Planck equation modeling a semiconductor device. We prove several decay estimates for the Lebesgue and Sobolev norms in one, two and three dimensions. We also provide the first term of the asymptotic expansion as $tightarrowinfty$.

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Cited in

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