On a drift-diffusion system for semiconductor devices

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Publication:730133

DOI10.1007/S00023-016-0493-6zbMATH Open1361.82038arXiv1603.03839OpenAlexW2301333889MaRDI QIDQ730133FDOQ730133

Rafael Granero-Belinchón

Publication date: 23 December 2016

Published in: Annales Henri Poincaré (Search for Journal in Brave)

Abstract: In this note we study a fractional Poisson-Nernst-Planck equation modeling a semiconductor device. We prove several decay estimates for the Lebesgue and Sobolev norms in one, two and three dimensions. We also provide the first term of the asymptotic expansion as tightarrowinfty.


Full work available at URL: https://arxiv.org/abs/1603.03839




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