An accelerated algorithm for 2D simulations of the quantum ballistic transport in nanoscale MOSFETs
DOI10.1016/J.JCP.2006.11.028zbMATH Open1123.81042OpenAlexW2045691323MaRDI QIDQ996489FDOQ996489
Naoufel Ben Abdallah, M. Mouis, Claudia Negulescu
Publication date: 14 September 2007
Published in: Journal of Computational Physics (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1016/j.jcp.2006.11.028
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Semiclassical techniques, including WKB and Maslov methods applied to problems in quantum theory (81Q20) Quantization in field theory; cohomological methods (81T70) Transport processes in time-dependent statistical mechanics (82C70) Software, source code, etc. for problems pertaining to quantum theory (81-04)
Cites Work
- Numerical analysis of a multiscale finite element scheme for the resolution of the stationary Schrödinger equation
- Multiscale simulation of transport in an open quantum system: Resonances and WKB interpolation
- Subband decomposition approach for the simulation of quantum electron transport in nanostructures
- Plane-wave basis finite elements and boundary elements for three-dimensional wave scattering
- Title not available (Why is that?)
- A geometric optics method for high-frequency electromagnetic fields computations near fold caustics. II: The energy
- A Stationary Schrödinger-Poisson System Arising from the Modelling of Electronic Devices
- Multiphase semiclassical approximation of an electron in a one-dimensional crystalline lattice. III: From ab initio models to WKB for Schrödinger-Poisson
- On a multidimensional Schrödinger-Poisson scattering model for semiconductors
Cited In (17)
- Large-Scale Scientific Computing
- Stationary Schrödinger equation in the semi-classical limit: numerical coupling of oscillatory and evanescent regions
- AN EFFECTIVE MASS MODEL FOR THE SIMULATION OF ULTRA-SCALED CONFINED DEVICES
- A self-consistent numerical method for simulation of quantum transport in high electron mobility transistor. II: The full quantum transport
- Numerical analysis of a multiscale finite element scheme for the resolution of the stationary Schrödinger equation
- A new multiscale discontinuous Galerkin method for the one-dimensional stationary Schrödinger equation
- The WKB local discontinuous Galerkin method for the simulation of Schrödinger equation in a resonant tunneling diode
- High-order multiscale discontinuous Galerkin methods for the one-dimensional stationary Schrödinger equation
- A new multiscale discontinuous Galerkin method for a class of second-order equations with oscillatory solutions in two-dimensional space
- Hybrid fluid-quantum coupling for the simulation of the transport of partially quantized particles in a DG-MOSFET
- An accelerated monotone iterative method for the quantum-corrected energy transport model
- A Double Scale Fast Algorithm for the Transient Evolution of a Resonant Tunneling Diode
- A posteriori error control in numerical simulations of semiconductor nanodevices
- Multiscale simulation of transport in an open quantum system: Resonances and WKB interpolation
- A high-order multiscale discontinuous Galerkin method for two-dimensional Schrödinger equation in quantum transport
- The accurate numerical solution of the Schrödinger equation with an explicitly time-dependent Hamiltonian
- Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices
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