On the Diffusion Limit of a Semiconductor Boltzmann–Poisson System Without Micro-Reversible Process
DOI10.1080/03605302.2010.483659zbMATH Open1200.82055OpenAlexW2044668941MaRDI QIDQ4933515FDOQ4933515
Mohamed Lazhar Tayeb, Nader Masmoudi
Publication date: 14 October 2010
Published in: Communications in Partial Differential Equations (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1080/03605302.2010.483659
diffusion approximationplasma physicsentropy dissipationdetailed balanceFermi-Dirac statisticssemiconductor theoryBoltzmann-Poisson system of equationshybrid-Hilbert expansion
Measures of information, entropy (94A17) Stability in context of PDEs (35B35) Asymptotic behavior of solutions to PDEs (35B40) Singular perturbations in context of PDEs (35B25) PDEs in connection with quantum mechanics (35Q40) PDEs in connection with biology, chemistry and other natural sciences (35Q92) Kinetic theory of gases in equilibrium statistical mechanics (82B40) Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of semiconductors (82D37)
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Cited In (5)
- Homogenization of a spherical harmonics expansion model
- Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model
- Homogenized diffusion limit of a Vlasov-Poisson-Fokker-Planck model
- Homogenization and Hydrodynamic Limit for Fermi-Dirac Statistics Coupled to a Poisson Equation
- Macroscopic approximation of a Fermi-Dirac statistics: Unbounded velocity space setting
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