Inverse doping problems for a P-N junction

DOI10.1163/156939406778474541zbMath1111.35100OpenAlexW4247855638MaRDI QIDQ3410885

Isabella Torcicollo, Sergio Vessella, Giuseppe Alì

Publication date: 16 November 2006

Full work available at URL: https://doi.org/10.1163/156939406778474541

zbMATH Keywords

semiconductordrift-diffusion equationsemiconductor devicesdoping profile identification

Mathematics Subject Classification ID

Initial-boundary value problems for second-order parabolic equations (35K20) Inverse problems for PDEs (35R30) Statistical mechanics of semiconductors (82D37)

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Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model

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