On inverse doping profile problems for the stationary voltage–current map

DOI10.1088/0266-5611/22/3/021zbMATH Open1099.35173arXiv2011.12200OpenAlexW2008710105MaRDI QIDQ5478604FDOQ5478604

Authors: A. Leitão, J. P. Zubelli, Peter Alexander Markowich 

Publication date: 13 July 2006

Abstract: We consider the problem of identifying possibly discontinuous doping profiles in semiconductor devices from data obtained by,stationary voltage-current maps. In particular, we focus on the so-called unipolar case, a system of PDE's derived directly from the drift diffusion equations. The related inverse problem corresponds to an inverse conductivity problem with partial data. The identification issue for this inverse problem is considered. In particular, for a discretized version of the problem, we derive a result connected to diffusion tomography theory. A numerical approach for the identification problem using level set methods is presented. Our method is compared with previous results in the literature, where Landweber-Kaczmarz type methods were used to solve a similar problem.

Full work available at URL: https://arxiv.org/abs/2011.12200

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zbMATH Keywords

level set methodssemiconductor devicesdrift diffusion equationsdiffusion tomographydoping profiles

Mathematics Subject Classification ID

PDEs in connection with optics and electromagnetic theory (35Q60) Inverse problems for PDEs (35R30) Motion of charged particles (78A35) Spectral, collocation and related methods for initial value and initial-boundary value problems involving PDEs (65M70) Statistical mechanics of semiconductors (82D37)

Cited In (16)

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• On the inverse doping profile problem
• Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model
• Modeling and simulation of the lateral photovoltage scanning method
• Identification of doping profiles in semiconductor devices
• A regularization method based on level sets and augmented Lagrangian for parameter identification problems with piecewise constant solutions
• On inverse problems for semiconductor equations
• Semiconductors and Dirichlet-to-Neumann maps
• On steepest-descent-Kaczmarz methods for regularizing systems of nonlinear ill-posed equations
• Geometric programming approach to doping profile design optimization of metal-oxide-semiconductor devices
• Suppressing instability in a Vlasov-Poisson system by an external electric field through constrained optimization
• Reconstruction of the doping profile in Vlasov-Poisson system
• Inverse doping problems for a P-N junction
• Inverse doping problems for semiconductor devices
• Reconstruction of Semiconductor Doping Profile from Laser-Beam-Induced Current Image
• An inverse problem of charge-collection microscopy

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