On inverse doping profile problems for the stationary voltage–current map
From MaRDI portal
Publication:5478604
PDEs in connection with optics and electromagnetic theory (35Q60) Inverse problems for PDEs (35R30) Motion of charged particles (78A35) Spectral, collocation and related methods for initial value and initial-boundary value problems involving PDEs (65M70) Statistical mechanics of semiconductors (82D37)
Abstract: We consider the problem of identifying possibly discontinuous doping profiles in semiconductor devices from data obtained by,stationary voltage-current maps. In particular, we focus on the so-called unipolar case, a system of PDE's derived directly from the drift diffusion equations. The related inverse problem corresponds to an inverse conductivity problem with partial data. The identification issue for this inverse problem is considered. In particular, for a discretized version of the problem, we derive a result connected to diffusion tomography theory. A numerical approach for the identification problem using level set methods is presented. Our method is compared with previous results in the literature, where Landweber-Kaczmarz type methods were used to solve a similar problem.
Recommendations
- On the inverse doping profile problem
- Inverse doping problems for a P-N junction
- Inverse doping problems for semiconductor devices
- Inverse doping profile of MOSFETs via geometric programming
- On the solution of forward and inverse problems of voltammetry
- On the inverse conductivity problem
- Inverse problem of recovering the electron diffusion coefficient
- On inverse problems for semiconductor equations
- Inverse Problems for Metal Oxide Semiconductor Field-Effect Transistor Contact Resistivity
- The inverse conductivity problem in two dimensions
Cited in
(16)- On a family of gradient-type projection methods for nonlinear ill-posed problems
- On the inverse doping profile problem
- Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model
- Modeling and simulation of the lateral photovoltage scanning method
- Identification of doping profiles in semiconductor devices
- A regularization method based on level sets and augmented Lagrangian for parameter identification problems with piecewise constant solutions
- On inverse problems for semiconductor equations
- On steepest-descent-Kaczmarz methods for regularizing systems of nonlinear ill-posed equations
- Semiconductors and Dirichlet-to-Neumann maps
- Geometric programming approach to doping profile design optimization of metal-oxide-semiconductor devices
- Suppressing instability in a Vlasov-Poisson system by an external electric field through constrained optimization
- Reconstruction of the doping profile in Vlasov-Poisson system
- Inverse doping problems for a P-N junction
- Inverse doping problems for semiconductor devices
- Reconstruction of Semiconductor Doping Profile from Laser-Beam-Induced Current Image
- An inverse problem of charge-collection microscopy
This page was built for publication: On inverse doping profile problems for the stationary voltage–current map
Report a bug (only for logged in users!)Click here to report a bug for this page (MaRDI item Q5478604)