Advanced physical models for silicon device simulation (Q3840935)
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scientific article; zbMATH DE number 1190386
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| English | Advanced physical models for silicon device simulation |
scientific article; zbMATH DE number 1190386 |
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16 August 1998
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silicon device
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numeric simulations
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moments of Boltzmann equation
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physics based models
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microscopic level
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taylored quantum mechanics
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0.7591555714607239
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0.7472018599510193
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0.741563081741333
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Advanced physical models for silicon device simulation (English)
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This book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation, as well as the derivation of physics-based models from a microscopic level, also using new approaches of ``taylored quantum mechanics''. Each model is compared with experimental data and applied to a number of simulation examples. The book is of interest to electrical engineers and solid-state physicists.
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