Advanced physical models for silicon device simulation

MaRDI QIDQ3840935zbMATH OpenFDO

Authors Andreas Schenk

Publication date 16 August 1998

zbMATH Keywords

microscopic levelmoments of Boltzmann equationnumeric simulationsphysics based modelssilicon devicetaylored quantum mechanics

Mathematics Subject Classification ID

Research exposition (monographs, survey articles) pertaining to fluid mechanics (76-02) Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Applications of statistical mechanics to specific types of physical systems (82D99)

Review text

This book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation, as well as the derivation of physics-based models from a microscopic level, also using new approaches of ``taylored quantum mechanics. Each model is compared with experimental data and applied to a number of simulation examples. The book is of interest to electrical engineers and solid-state physicists.

Recommendations

• scientific article; zbMATH DE number 687001
• scientific article; zbMATH DE number 4110040
• ENERGY‐MOMENTUM TRANSPORT MODEL SUITABLE FOR SMALL GEOMETRY SILICON DEVICE SIMULATION
• Charge transport in low dimensional semiconductor structures. The maximum entropy approach
• Semiconductor equations

Cited in

(10)

• An iterative method for adaptive finite element solutions of an energy transport model of semiconductor devices
• scientific article; zbMATH DE number 444441 (Why is no real title available?)
• On the modeling and simulation of reaction-transfer dynamics in semiconductor-electrolyte solar cells
• scientific article; zbMATH DE number 687001 (Why is no real title available?)
• Physical models in device simulation of SI power pin‐diodes for optimal fitting of simulation results to measured data
• scientific article; zbMATH DE number 1967753 (Why is no real title available?)
• Optimal Control for Semiconductor Diode Design based on the MEP Energy-Transport Model
• ENERGY‐MOMENTUM TRANSPORT MODEL SUITABLE FOR SMALL GEOMETRY SILICON DEVICE SIMULATION
• Recovering doping profiles in semiconductor devices with the Boltzmann-Poisson model
• 2D numerical simulation of the MEP energy-transport model with a finite difference scheme

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