Local-in-time well-posedness of a regularized mathematical model for silicon MESFET
DOI10.1007/S00033-010-0063-6zbMATH Open1237.82044OpenAlexW2084774567MaRDI QIDQ638709FDOQ638709
Authors: D. L. Tkachev, A. M. Blokhin 
Publication date: 13 September 2011
Published in: ZAMP. Zeitschrift für angewandte Mathematik und Physik (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1007/s00033-010-0063-6
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Cites Work
- Linear and quasilinear elliptic equations
- Elliptic Partial Differential Equations of Second Order
- Title not available (Why is that?)
- Moment closure hierarchies for kinetic theories.
- Title not available (Why is that?)
- Title not available (Why is that?)
- Title not available (Why is that?)
- On a hierarchy of macroscopic models for semiconductors
- Hydrodynamical modeling of charge carrier transport in semiconductors
- 2D simulation of a silicon MESFET with a nonparabolic hydrodynamical model based on the maximum entropy principle
- Non parabolic band transport in semiconductors: closure of the moment equations
- Non-parabolic band transport in semiconductors: Closure of the production terms in the moment equations
- Non-parabolic band hydrodynamical model of silicon semiconductors and simulation of electron devices
- Title not available (Why is that?)
- 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
- Title not available (Why is that?)
- TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION
- Representation of the solution to a model problem in semiconductor physics
- Linear asymptotic stability of the equilibrium state for the 2-D MEP hydrodynamical model of charge transport in semiconductors
- Designing of computational algorithm for system of moment equations which describe charge transport in semiconductors
- Numerical method for 2D simulation of a silicon MESFET with a hydrodynamical model based on the maximum entropy principle
- Nonlinear asymptotic stability of the equilibrium state for the MEP model of charge transport in semiconductors
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