Local-in-time well-posedness of a regularized mathematical model for silicon MESFET
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Publication:638709
DOI10.1007/s00033-010-0063-6zbMath1237.82044MaRDI QIDQ638709
D. L. Tkachev, Alexander Blokhin
Publication date: 13 September 2011
Published in: ZAMP. Zeitschrift für angewandte Mathematik und Physik (Search for Journal in Brave)
Full work available at URL: https://doi.org/10.1007/s00033-010-0063-6
fixed-point argument; hydrodynamical model of charge transport in semiconductors; non-Cauchy-Kovalevskaja-type system
82D37: Statistical mechanics of semiconductors
35A01: Existence problems for PDEs: global existence, local existence, non-existence
35D30: Weak solutions to PDEs
35G61: Initial-boundary value problems for systems of nonlinear higher-order PDEs
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