Discretization of semiconductor device problems. II
zbMATH Open1207.78001MaRDI QIDQ3369401FDOQ3369401
Authors: Angelo Marcello Anile, Nikolaos Nikiforakis, Vittorio Romano, Giovanni Russo 
Publication date: 13 February 2006
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Technical applications of optics and electromagnetic theory (78A55) Rarefied gas flows, Boltzmann equation in fluid mechanics (76P05) Transport processes in time-dependent statistical mechanics (82C70) Statistical mechanics of semiconductors (82D37) Research exposition (monographs, survey articles) pertaining to optics and electromagnetic theory (78-02)
Cited In (10)
- Analysis of a two-grid method for semiconductor device problem
- Convergent discretizations for the Nernst-Planck-Poisson system
- 2D numerical simulation of the MEP energy-transport model with a finite difference scheme
- TRANSIENT SEMICONDUCTOR DEVICE SIMULATION INCLUDING ENERGY BALANCE EQUATION
- EM-equations, coupling to heat and to circuits
- Adaptive mesh refinement for compressible thermal flow in porous media
- An adaptive conservative finite volume method for Poisson-Nernst-Planck equations on a moving mesh
- On the inclusion of the recombination term in discretizations of the semiconductor device equations
- AN EXTENDED SCHARFETTER‐GUMMEL SCHEME FOR HIGH ORDER MOMENT EQUATIONS
- A free energy satisfying discontinuous Galerkin method for one-dimensional Poisson-Nernst-Planck systems
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