Pages that link to "Item:Q638709"
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The following pages link to Local-in-time well-posedness of a regularized mathematical model for silicon MESFET (Q638709):
Displayed 2 items.
- Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (Q462764) (← links)
- Regularity of the solution and well-posedness of a mixed problem for an elliptic system with quadratic nonlinearity in gradients (Q2838936) (← links)