Pages that link to "Item:Q975119"
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The following pages link to Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices (Q975119):
Displayed 12 items.
- Impact of geometric, thermal and tunneling effects on nano-transistors (Q349785) (← links)
- Simulation of a double-gate MOSFET by a non-parabolic energy-transport subband model for semiconductors based on the maximum entropy principle (Q462764) (← links)
- Gigahertz nanomechanical oscillators based on ions inside cyclic peptide nanotubes: a continuum study (Q520468) (← links)
- A non parabolic hydrodynamical subband model for semiconductors based on the maximum entropy principle (Q1931019) (← links)
- Numerical simulation of a double-gate MOSFET with a subband model for semiconductors based on the maximum entropy principle (Q1939398) (← links)
- MIB Galerkin method for elliptic interface problems (Q2253071) (← links)
- Finite volume formulation of the MIB method for elliptic interface problems (Q2357420) (← links)
- A Galerkin formulation of the MIB method for three dimensional elliptic interface problems (Q2397216) (← links)
- High-order fractional partial differential equation transform for molecular surface construction (Q2863919) (← links)
- Partial differential equation transform-Variational formulation and Fourier analysis (Q2893189) (← links)
- Quantum dynamics in continuum for proton transport II: Variational solvent-solute interface (Q2900421) (← links)
- Modeling and computation of heterogeneous implicit solvent and its applications for biomolecules (Q5890951) (← links)