Numerical Simulation of Semiconductor Devices by the MEP Energy-Transport Model with Crystal Heating (Q2902822): Difference between revisions
From MaRDI portal
Created a new Item |
Set OpenAlex properties. |
||
| (2 intermediate revisions by 2 users not shown) | |||
| Property / MaRDI profile type | |||
| Property / MaRDI profile type: MaRDI publication profile / rank | |||
Normal rank | |||
| Property / full work available at URL | |||
| Property / full work available at URL: https://doi.org/10.1007/978-3-642-22453-9_38 / rank | |||
Normal rank | |||
| Property / OpenAlex ID | |||
| Property / OpenAlex ID: W2281784787 / rank | |||
Normal rank | |||
| links / mardi / name | links / mardi / name | ||
Latest revision as of 19:30, 19 March 2024
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Numerical Simulation of Semiconductor Devices by the MEP Energy-Transport Model with Crystal Heating |
scientific article |
Statements
Numerical Simulation of Semiconductor Devices by the MEP Energy-Transport Model with Crystal Heating (English)
0 references
22 August 2012
0 references
semiconductor devices
0 references
electron-phonon system
0 references
maximum entropy principle (MEP)
0 references
