Finite element solutions to \(GaAs-AIAs\) quantum wells with connection matrices at heterojunctions (Q1339926): Difference between revisions
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Latest revision as of 21:22, 19 March 2024
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Finite element solutions to \(GaAs-AIAs\) quantum wells with connection matrices at heterojunctions |
scientific article |
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Finite element solutions to \(GaAs-AIAs\) quantum wells with connection matrices at heterojunctions (English)
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14 May 1995
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The irreducible finite element method is developed to incorporate the interface connection matrices at the heterojunctions of quantum wells. For the \(GaAs-AIAs\) quantum well, the finite difference interface formulation must be used, and the relative errors are shown to be less than 10. This finite element method is applied to compare the electric field effects on the \(GaAs-AIAs\) quantum well modeled by the conventional, the effective-mass-dependent, and the energy-dependent connection matrices.
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connection matrix
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irreducible finite element method
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quantum wells
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electric field effects
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