A more accurate Scharfetter-Gummel algorithm of electron transport for semiconductor and gas discharge simulation (Q1893758): Difference between revisions
From MaRDI portal
Set profile property. |
Set OpenAlex properties. |
||
| Property / full work available at URL | |||
| Property / full work available at URL: https://doi.org/10.1006/jcph.1995.1123 / rank | |||
Normal rank | |||
| Property / OpenAlex ID | |||
| Property / OpenAlex ID: W2010221888 / rank | |||
Normal rank | |||
Revision as of 21:36, 19 March 2024
scientific article
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | A more accurate Scharfetter-Gummel algorithm of electron transport for semiconductor and gas discharge simulation |
scientific article |
Statements
A more accurate Scharfetter-Gummel algorithm of electron transport for semiconductor and gas discharge simulation (English)
0 references
2 August 1995
0 references
A well-known Scharfetter-Gummel (SG) scheme for convection-dominated problems of semiconductor and gas discharge plasmas is improved. A one- dimensional convection-diffusion equation is considered. It is shown that the original SG scheme is accurate if the potential drop between two adjacent nodes is much less than the electron temperature. Tests have shown that the accuracy of this scheme is comparable to the FCT technique, but in contrast it does not produce a ``staircase'' disturbance on rapidly changing functions.
0 references
additional nodes
0 references
one-dimensional convection-diffusion equation
0 references
potential drop
0 references
electron temperature
0 references
