Self-similar solutions for infiltration of dopant into semiconductors (Q1181008): Difference between revisions

The paper discusses the infiltration of inpurities into a semi-infinite slab of a semiconductor, in which initially there are no inpurities \((c=0)\) and the concentration of the vacancies is everywhere equal to its equilibrium value \(v^*\). With corresponding initial and boundary values, the aim of the paper is to determine the evolution of the concentrations of the impurities and the vacancies. Looking for a solution in self-similar form, with \(c(x,t)=f(\eta)\), \(v(x,t)=g(\eta)\), \(\eta=x/\sqrt t\), the problem is reduced to the system \[ (f'g- fg')+(1/2)\eta f'=0,\quad g'+(p/2)\eta g+(q/2)\eta f'=0, \] for which the existence of a solution, and some global properties and asymptotical behaviour are studied.