Uniqueness for the two-dimensional semiconductor equations in case of high carrier densities (Q1321004): Difference between revisions
From MaRDI portal
Latest revision as of 15:26, 22 May 2024
scientific article
Language | Label | Description | Also known as |
---|---|---|---|
English | Uniqueness for the two-dimensional semiconductor equations in case of high carrier densities |
scientific article |
Statements
Uniqueness for the two-dimensional semiconductor equations in case of high carrier densities (English)
0 references
26 June 1994
0 references
Up to now a satisfactory uniqueness result for solutions to so called drift-diffusion models of carrier transport in semiconductor devices has been proved in case of low carrier densities (where Boltzmann-statistics leads to a logarithmic dependence of the chemical potentials on the densities of electrons and holes). For the case of high carrier densities uniqueness is known only under unjustified ad hoc assumptions with respect to the smoothness of the solutions. In this paper it is shown that for spatially two-dimensional problems these ad hoc assumptions can be avoided. The results rely heavily on a regularity result for solutions to nonlinear parabolic equations in case of mixed boundary conditions proved recently by the authors.
0 references
Fermi-Dirac statistics
0 references
a priori estimates
0 references
uniqueness
0 references
drift-diffusion models
0 references
carrier transport in semiconductor devices
0 references
spatially two- dimensional problems
0 references
mixed boundary conditions
0 references
0 references