A steady state potential flow model for semiconductors (Q1327139): Difference between revisions

The paper concerns the hydrodynamic equations modelling a unipolar semiconductor. Here the unknown functions are \(\rho\) = electron density, \(u=\{ u_ 1, u_ 2, u_ 3\}\) = electron velocity and \(\varphi\) = electrostatic potential. Under the assumption of potential flow \(u= - \nabla\psi\) (\(\psi\) = velocity potential) the equations take the form \[ {\textstyle {1\over 2}}| \nabla\psi |^ 2+ h(\rho)= \varphi+ {\textstyle {\psi\over\tau}}, \qquad \text{div}(\rho \nabla\psi)=0, \quad \Delta\varphi= \rho-C \] which have to be considered in a bounded domain \(\Omega\subset \mathbb{R}^ 3\), where \(h\) = given function, \(\tau= \text{const}>0\) relaxation time and \(C= C(x)\) \((x\in\Omega)\) given doping profile. By the aid of Schauder's fixed point theorem the author prove the existence of a solution \((\psi,\rho, \varphi)\in C^{2,\delta} (\overline{\Omega})\times W^{2,q}(\Omega)\times W^{2,q} (\Omega)\) \((1\leq q<\infty)\) provided \(\Omega\) is a bounded convex \(C^{2,\delta}\)-domain in \(\mathbb{R}^ 3\), \(\psi\), \(\rho\), \(\varphi\) are subject to Dirichlet conditions along the whole boundary \(\partial\Omega\) and an appropriate smallness condition on the Dirichlet datum of \(\psi\) is satisfied. This smallness condition implies ellipticity of the problem under consideration which is equivalent to the case of subsonic flow of electrons in the semiconductor device.