AN ANALYSIS OF THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL — BOUNDARY CONDITIONS AND SIMULATIONS (Q4872545): Difference between revisions
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Property / cites work: ON THE WELL‐POSEDNESS OF THE TWO‐DIMENSIONAL HYDRODYNAMIC MODEL FOR SEMICONDUCTOR DEVICES / rank | |||
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Property / cites work: A finite element formulation for the hydrodynamic semiconductor device equations / rank | |||
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Property / cites work: On the symmetric form of systems of conservation laws with entropy / rank | |||
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Latest revision as of 10:20, 24 May 2024
scientific article; zbMATH DE number 859311
Language | Label | Description | Also known as |
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English | AN ANALYSIS OF THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL — BOUNDARY CONDITIONS AND SIMULATIONS |
scientific article; zbMATH DE number 859311 |
Statements
AN ANALYSIS OF THE HYDRODYNAMIC SEMICONDUCTOR DEVICE MODEL — BOUNDARY CONDITIONS AND SIMULATIONS (English)
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17 June 1996
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multi-dimensional hydrodynamic model
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semiconductor device simulation
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energy method
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boundary integrals
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finite element
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Boltzmann transport equation
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