Transient analysis of LE‐VGF growth of compound semiconductors (Q4700966): Difference between revisions
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| Property / full work available at URL: https://doi.org/10.1108/09615539810241141 / rank | |||
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| Property / cites work: Computer simulation of liquid encapsulated vertical bridgman crystal growth: pseudo steady‐state calculations / rank | |||
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| Property / cites work: Two-dimensional unsteady solidification problem calculated by using the boundary-fitted coordinate system / rank | |||
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| Property / cites work: A numerical method for solving the two‐dimensional unsteady solidification problem with the motion of melt by using the boundary‐fitted co‐ordinate system / rank | |||
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Latest revision as of 10:02, 29 May 2024
scientific article; zbMATH DE number 1358388
| Language | Label | Description | Also known as |
|---|---|---|---|
| English | Transient analysis of LE‐VGF growth of compound semiconductors |
scientific article; zbMATH DE number 1358388 |
Statements
Transient analysis of LE‐VGF growth of compound semiconductors (English)
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19 June 2001
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crystal growth
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finite differences
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liquid encapsulated vertical gradient freezing method
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boundary fixing method
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melt/crystal interface shape
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growth rate
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crucible thickness
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thermal conductivity
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