Transient analysis of LE‐VGF growth of compound semiconductors (Q4700966): Difference between revisions

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Property / cites work: Computer simulation of liquid encapsulated vertical bridgman crystal growth: pseudo steady‐state calculations / rank
 
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Property / cites work: A numerical method for solving the two‐dimensional unsteady solidification problem with the motion of melt by using the boundary‐fitted co‐ordinate system / rank
 
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Latest revision as of 10:02, 29 May 2024

scientific article; zbMATH DE number 1358388
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English
Transient analysis of LE‐VGF growth of compound semiconductors
scientific article; zbMATH DE number 1358388

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    Transient analysis of LE‐VGF growth of compound semiconductors (English)
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    19 June 2001
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    crystal growth
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    finite differences
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    liquid encapsulated vertical gradient freezing method
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    boundary fixing method
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    melt/crystal interface shape
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    growth rate
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    crucible thickness
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    thermal conductivity
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