A domain decomposition method for silicon devices (Q2721311): Difference between revisions

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+https://doi.org/10.1080/00411450008205889
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+W2007519341
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+High field approximations to a Boltzmann-Poisson system and boundary conditions in a semiconductor
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+Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices
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+Conditions for runaway phenomena in the kinetic theory of particle swarms
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+Efficient implementation of weighted ENO schemes
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+Runaway Phenomena and Fluid Approximation Under High Fields in Semiconductor Kinetic Theory
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+Derivation of a hydrodynamic system hierarchy for semiconductors from the Boltzmann equation
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+Efficient implementation of essentially nonoscillatory shock-capturing schemes. II
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