Charge transport in 1D silicon devices via Monte Carlo simulation and Boltzmann‐Poisson solver (Q3156132): Difference between revisions

@@ Property / author @@
-Armando Majorana
@@ Property / author: Armando Majorana / rank @@
-Normal rank
@@ Property / author @@
-Cristina L. R. Milazzo
@@ Property / author: Cristina L. R. Milazzo / rank @@
-Normal rank
@@ Property / author @@
+Armando Majorana
@@ Property / author: Armando Majorana / rank @@
+Normal rank
@@ Property / author @@
+Cristina L. R. Milazzo
@@ Property / author: Cristina L. R. Milazzo / rank @@
+Normal rank
@@ Property / MaRDI profile type @@
+MaRDI publication profile
@@ Property / MaRDI profile type: MaRDI publication profile / rank @@
+Normal rank
@@ Property / full work available at URL @@
+https://doi.org/10.1108/03321640410510578
+Normal rank
@@ Property / OpenAlex ID @@
+W2004954336
@@ Property / OpenAlex ID: W2004954336 / rank @@
+Normal rank
@@ Property / cites work @@
+Upwind finite difference solution of Boltzmann equation applied to electron transport in semiconductor devices
+Normal rank
@@ Property / cites work @@
+A finite difference scheme solving the Boltzmann-Poisson system for semiconductor devices
+Normal rank