ACCURATE COMPUTATION OF ELECTRIC FIELD IN REVERSE‐BIASED SEMICONDUCTOR DEVICES: A MIXED FINITE‐ELEMENT APPROACH (Q3756468): Difference between revisions

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Property / author: Luisa Donatella Marini / rank
 
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Property / cites work: Sur la régularité de la solution d'inéquations elliptiques / rank
 
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Property / cites work: Error estimates for the finite element solution of variational inequalities. Part I. primal theory / rank
 
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Property / cites work: Error estimates for the finite element solution of variational inequalities. Part II. Mixed methods / rank
 
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Property / cites work: Q3914338 / rank
 
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Latest revision as of 19:01, 17 June 2024

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ACCURATE COMPUTATION OF ELECTRIC FIELD IN REVERSE‐BIASED SEMICONDUCTOR DEVICES: A MIXED FINITE‐ELEMENT APPROACH
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    ACCURATE COMPUTATION OF ELECTRIC FIELD IN REVERSE‐BIASED SEMICONDUCTOR DEVICES: A MIXED FINITE‐ELEMENT APPROACH (English)
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    1984
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    finite element method
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    free boundary problem
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    reverse-biased semiconductor devices
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