Boundedness of solutions to a time-dependent semiconductor model (Q986577): Difference between revisions

The paper under review is concerned with the system \[ \frac{\partial n}{\partial t} - \text{ div }(D_n\nabla n - \mu_n\nabla V) = 0 \quad \text{in } Q_T = \Omega\times (0,T), \tag{1} \] \[ -\Delta V = -n+C(x) \quad \text{in } Q_T, \tag{2} \] where \(\Omega\subset \mathbb{R}^N\) is a bounded domain. System (1), (2) is completed by mixed boundary conditions on \(n\) and \(V\), and an initial condition on \(n\). The unknowns \(n\) and \(V\) characterize the evolution of the electron density and the electrostatic potential, respectively, of a semiconductor device. The assumptions on the data in (1), (2) are as follows {\parindent=7mm \begin{itemize}\item[(i)] \(C\in L^\infty(\Omega)\), \item[(ii)] \(D_n\) measurable in \(Q_T\), \(0<m\leq D_n\leq M<+\infty\) in \(Q_T\), \item[(iii)] \(\mu_n\in L^\infty(0,T; W^{1,\infty}(\Omega))\), \(\mu_n\geq 0\) a. e. in \(Q_T.\) \end{itemize}} In the case \(N=2\) the author proves the existence of a weak solution \(n, V\) to (1), (2) with \(n\in L^\infty(Q_T)\). The proof is based on an approximation argument.