A compact quantum surface potential model for a MOSFET device (Q988450): Difference between revisions
From MaRDI portal
Created a new Item |
ReferenceBot (talk | contribs) Changed an Item |
||
(3 intermediate revisions by 3 users not shown) | |||
Property / MaRDI profile type | |||
Property / MaRDI profile type: MaRDI publication profile / rank | |||
Normal rank | |||
Property / full work available at URL | |||
Property / full work available at URL: https://doi.org/10.1016/j.mcm.2009.08.023 / rank | |||
Normal rank | |||
Property / OpenAlex ID | |||
Property / OpenAlex ID: W2094980659 / rank | |||
Normal rank | |||
Property / cites work | |||
Property / cites work: Asymptotic Methods for Metal Oxide Semiconductor Field Effect Transistor Modeling / rank | |||
Normal rank | |||
Property / cites work | |||
Property / cites work: Semiconductor Simulations Using a Coupled Quantum Drift‐Diffusion Schrödinger–Poisson Model / rank | |||
Normal rank | |||
Property / cites work | |||
Property / cites work: Non-quasi-static approach with surface-potential-based MOSFET model HiSIM for RF circuit simulations / rank | |||
Normal rank | |||
links / mardi / name | links / mardi / name | ||
Latest revision as of 02:41, 3 July 2024
scientific article
Language | Label | Description | Also known as |
---|---|---|---|
English | A compact quantum surface potential model for a MOSFET device |
scientific article |
Statements
A compact quantum surface potential model for a MOSFET device (English)
0 references
26 August 2010
0 references
MOSFET
0 references
analytic solution
0 references
Lambert function
0 references
quantum corrections
0 references
0 references