Semiconductor Simulations Using a Coupled Quantum Drift‐Diffusion Schrödinger–Poisson Model (Q5470278)

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scientific article; zbMATH DE number 5029052
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Semiconductor Simulations Using a Coupled Quantum Drift‐Diffusion Schrödinger–Poisson Model
scientific article; zbMATH DE number 5029052

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    Semiconductor Simulations Using a Coupled Quantum Drift‐Diffusion Schrödinger–Poisson Model (English)
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    30 May 2006
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    Schrödinger-Poisson system
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    quantum drift-diffusion model
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    quantum microscopic-macroscopic coupling
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    finite differences
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    resonant tunneling diode
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    hysteresis
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