Pages that link to "Item:Q5470278"

The following pages link to Semiconductor Simulations Using a Coupled Quantum Drift‐Diffusion Schrödinger–Poisson Model (Q5470278):

Displaying 10 items.

• Analysis of a fast method for solving the high frequency Helmholtz equation in one dimension (Q639962) (← links)
• An entropic quantum drift-diffusion model for electron transport in resonant tunneling diodes (Q870536) (← links)
• An accelerated monotone iterative method for the quantum-corrected energy transport model (Q939488) (← links)
• Modeling and simulation of electronic structure, material interface and random doping in nano-electronic devices (Q975119) (← links)
• A compact quantum surface potential model for a MOSFET device (Q988450) (← links)
• Hybrid coupling of a one-dimensional energy-transport Schrödinger system (Q1682384) (← links)
• A posteriori error control in numerical simulations of semiconductor nanodevices (Q1682685) (← links)
• A quantum drift-diffusion model and its use into a hybrid strategy for strongly confined nanostructures (Q1728012) (← links)
• NOVEL PROPERTIES IN OXIDE HETEROSTRUCTURES (Q3636514) (← links)
• A finite element method with energy-adaptive grids for the coupled Schrödinger-Poisson-drift-diffusion model (Q6087959) (← links)